3D Vertical NAND Flash with 1 Terabit

Samsung Electronics Co., Ltd., the world leader in advanced memory technology has been mass that it has boast an industry by introducing the  first solid state drive (SSD) based on its industry leading 3D Vertical NAND Technology flash memory that breaks through current 2D or planer NAND scaling limits. Samsung said that it has spent nearly 10 years of research and development on 3D Vertical NAND and it now has more than 300 patent-pending 3D memory technologies worldwide. Even earlier the chips have only 16 GB of capacity, but Samsung has broken this by announcing a breakthrough in the production of non volatile semiconductor memories, chips that stack layers of data-storing silicon. Samsung’s V-NAND SSD comes in 960 GB and 480 GB versions. The new V-NAND is manufactured at a 10 nm process size, and it starts at a density of 128 GB to 1 TB that can be accommodated on a single chip, which corresponds 16 GB to 128 GB per NAND chip.

3D Vertical NAND Flash with 1 Terabit

The V-NAND also offers 35,000 program erase cycles. One of the most important technological achievements of the new Samsung V-NAND announcement is that the proprietary vertical interconnect process technology can stack various layers that are comprised up to 24 individual NAND cells on the top of each layer. The Samsung spoker has written in his response to the Computerworld as “The vertical layers in V-NAND cells are measured in nanometers and so stacking them would not make much difference on a micrometer scale”. It is not yet known what the limits will be in sense of layers in the new 3D V-NAND, as it is 24 layers in present, the next generation may get at 32 layers. It is expected as in future it could be considerably high.

According to the Samsung, the 3D NAND will provide 2 to 10 times higher reliability and twice the writing performance. It has achieved the profit in terms of both the ratio and the performance. The stunning feature in the new 3D V-NAND is, as it will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid-state drives. There’s no word yet on exactly when a consumer-level SSD filled with V-NAND will become available. The cell structure of the new 3D V-NAND is based on the 3D Charge Trap Flash technology and also with a vertical interconnects process technology to link the 3D cell array. But 3D NAND also has its limits, and it’s expected to reach those by the end of this decade.

3D Vertical NAND Flash with 1 Terabit1

The global NAND flash memory market is expected to reach approximately $30.8 billion in revenues by the end of 2016, from approximately $23.6 billion in 2013, with an annual growth rate of 11%. Samsung will continue to introduce next-generation V-NAND products with enhanced performance to meet diverse customer needs for NAND flash-based storage. This is certain to be an interesting technology to watch over the next few years. However, the company has already begun mass production of 128 Gb 3D V-NAND components.

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